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The nonlinear drain-source capacitance (Cds) of source field plated power RF GaN device has been modeled by an artificial neural network (ANN) for easy integration with a compact model. This hybrid modeling approach can be suitable for a quick, technology independent solution to a complex problem. In this study it is shown that the proposed hybrid model based on a modified EEHEMT model demonstrates...
This paper discusses an approach taken to extract a virtual X-parameter (vX-parameter) model for a 500W L-Band internally matched device (IMD). X-parameters are essentially an open form of nonlinear data format that can be directly extracted from an NVNA and can be used in a circuit simulator as non-linear models. However, for very high power devices, the NVNA and its required peripheral components...
A novel empirical thermal modeling technique is proposed to allow improved prediction of channel temperature for GaN HEMT power devices when driven with pulsed DC/RF signals. The proposed thermal model contains a multiple-pole RC network and adapts itself based on the pulse width and duty cycles of the input signals. The model, which is incorporated within an Angelov-based compact non-linear model,...
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