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A silicon carbide (SiC) trench MOSFET (TMOS) with integrated three-level protection (TLP) Schottky barrier diode (SBD), named ITS-TMOS, is proposed and investigated by simulation. The device features the integrated TLP-SBD that remarkably improves body diode characteristics while guarantees excellent fundamental performance of TMOS. In the blocking state, the P-base region, the trench gate, and the...
Because the solid-state drive (SSD) shows high access performance, it is usually integrated into existing hard disk drive (HDD)-based storage hierarchy to form HDD/SSD hybrid storage systems. To further improve the performance of HDD/SSD hybrid storage systems, data migration schemes have been put forward to migrate the sequential data between HDD and SSD. However, the existing schemes cannot be aware...
DPSK based inter-satellite optical communication systems are exposed to space radiation environment. As the component of radiation environment, gamma irradiation will result in serious system performance degradation. In order to analyze the performance degradation, main devices employed in a DPSK based inter-satellite optical communication system were irradiated to a total dose of 10krad with the...
As the shrinking of chip size continues, the demand for the improvement of the total lithographic overlay performance in the semiconductor industry become increasingly higher, which has resulted in proportionally higher requirement on the alignment performance. When the semiconductor processes reaches the 1X generation, and when the FinFet device becomes a mainstream technology, the lithographic process...
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