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We have submitted the AlGaN/GaN High electron mobility transistors (HEMTs) to the high temperature reverse bias(HTRB) stress to assess their reliability for high voltage operations. The effects of HTRB stress as a function of the VDG and stress time on the DC parameters and trapping effects were investigated. The study was based on combined DC and pulsed characterization, transient measurement. It...
Temperature-dependent I-V characteristics are performed in this paper to investigate the trap states in AlGaN/GaN HEMTs. From temperature-dependent sub-threshold slope measurements conducted at 300K to 363K and 363K to 423K, two different trap densities are identified at AlGaN/GaN heterostructure interface with DitA and DitB of 1.08∼2.6×1012 eV•cm2 and 1.07∼1.44×1013 eV•cm−2 respectively. The trap...
In this paper, the reliability in AlGaN/GaN HEMTs has been assessed by analyzing the spatial intensity distribution of electroluminescence (EL) detected by Photo Emission Microscope (PEM) during the OFF-state step-stress experiment. And it is found that a relationship between breakdown point and hot spots was confirmed. In addition, we report on the different of EL image before and after failure....
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