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We fabricated diamond lateral p–n junction diodes by selective growth of n+‐type diamond and evaluated their structural and electrical properties. The phosphorus‐doped n+ diamond was selectively grown by microwave chemical vapor deposition at the side of a boron‐doped p‐type layer to form lateral p–n junction diodes. No distinct defects are observed at the interface of the p–n junction diode by cross‐sectional...
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