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PMOS degradation with the blanket-stress-memory-technique (SMT) nitride layer on the (100) wafer with ?100? orientation has been observed, and the degradation mechanism is examined. The boron-doping loss from both the PMOS gate and the source/drain region during the SMT process is the root cause. In situ N2 plasma treatment before the SMT layer deposition has been implemented for the first time to...
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