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Crystal defects present in GaAs nanocrystals ∼15–50 nm in diameter and grown by metal organic vapor phase epitaxy on top of two different nanopatterned Si(001) substrates (nanopillars and nanotips with ∼40–80 nm openings embedded in a SiO2 matrix) and on a planar substrate, have been investigated by means of atomic-resolution aberration-corrected scanning transmission electron microscopy. Conditions...
The local atomic structure of [110] tilt grain boundaries (GBs) formed in ∼100 nm‐sized GaAs nanocrystals, which crystallize in the non‐centrosymmetric zincblende‐type structure with face‐centred cubic lattice symmetry, was imaged and analysed by means of high‐resolution high‐angle annular dark‐field scanning transmission electron microscopy (HAADF‐STEM). The nanocrystals were grown by metal–organic...
The early growth stage of GaAs by metal organic vapor phase epitaxy on a novel kind of Si substrate is investigated. The substrate consists of nanotips (NTs) fabricated on a Si(001) wafer by means of lithography and reactive ion etching. 3D GaAs nanocrystals are found to nucleate with a probability of 90% on the (n0m), (–n0m), (0nm), and (0–nm) facets (n, m integers) of these NTs. Additionally, in...
The development of new electro-optical devices and the realization of novel types of transistors require a profound understanding of the structural characteristics of new semiconductor heterostructures. This article provides a concise review about structural defects which occur in semiconductor heterostructures on the basis of micro-patterned Si substrates. In particular, one- and two-dimensional...
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