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In this paper, a novel planar high-voltage normally-off 4H-SiC vertical JFET (P-VJFET) is proposed and modeled by way of two-dimensional numerical simulations. The proposed P-VJFET is based on the monolithic combination of a low voltage lateral JFET (LJFET) and a high voltage vertical JFET. By designing the LJFET to be normally-off, the P-VJFET becomes a normally-off switch without requiring a submicron...
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