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A-plane GaN was attempted to be grown on (11-20) 4H-SiC bulk substrate without using a traditional thick buffer layer. By inducing TMAl treatment before the GaN growth step and using both a low pressure and V/III ratio, the interlayer thickness of the a-plane GaN/SiC was reduced to 1.7+0.5nm. The ultrathin interlayer was observed to be either AlN or AlGaN with a low Ga composition. This study is aimed...