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Five different compositions of Te 46-x As 32+x Ge 10 Si 12 chalcogenide glass system were prepared with the atomic percentages 0, 1, 2, 4 and 5.I-V characteristic curves for thin film samples of the investigated compositions were typical for threshold switching behaviour. It was found that the threshold voltage increased linearly...
Investigation of the switching phenomenon in amorphous In 2 Te 3 films revealed that it is typical for a memory switch. The thickness dependence of the mean value of the switching voltage V th was linear in the investigated range and Vμacr; th decreased exponentially with a temperature rise from 298 to 373 K. The switching voltage activation energy (ε) calculated...
Se 90-x Sb x Bi 10 chalcogenide glasses with a Sb content varying in the range 35-45 atomic percentage were prepared by quenching from the melt. The amorphous nature of thin film form prepared by thermal evaporation technique was established by X-ray diffraction. Switching effects were observed in the deposited thin films of the system under test with the...
Thin chalcogenide films from the Te 46-x As 32+x Ge 10 Si 12 (0 x 5) system have been prepared by thermal evaporation. The current-voltage characteristics in the temperature range 305-423 K and thickness range 116-364 nm is ohmic in the lower field regime followed by non-ohmic behaviour in the higher voltage regime which...
Thin film samples of In 2 Se 3 were prepared from synthesized polycrystalline In 2 Se 3 by a thermal evaporation technique. X-ray analysis show that the synthesized material has α-phase structure, while the as-deposited films have an amorphous structure. The films have β-phase structure after annealing at temperature 523 K. The conduction activation energy (E ...
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