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Effects of post-deposition annealing at 400–1000 °C in ammonia (NH3) gas ambient towards physical and electrical characteristics of metal-organic decomposition derived CeO2 films spin-coated on n-type Si substrates were studied. The use of NH3 annealing as N and H sources has promoted nitridation and passivation occurring at interface between the CeO2 and Si. Mixed oxidation states (Ce4+ and Ce3+)...
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