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We previously proposed a compact model of amorphous layer thickness over a wide range of ion implantation conditions using a vertical ion implantation profile parameter database. We also proposed a new parameter for the through dose. We extended the model to any tilt angle for ion implantation using one more parameter for the lateral straggling of the ion implantation profile.
Analyzing experimental boron transient diffusion profiles in Si MOSFETs over a wide temperature range with the process simulator TESIM, we evaluated the related transient diffusion time t/sub E/, enhanced diffusivity D/sub enh/, and maximum transient diffusion concentration C/sub enh/. Our extracted values contradict previously reported values, but it is due to the fact that the former works neglected...
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