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A novel 4H-SiC metal semiconductor field effect transistor with localized high-doped P-buffer layer is proposed in this paper. Compared with conventional structure, because of the higher doped concentration in the P-buffer layer between the gate and the drain, greater depletion layer generates and extends to the channel, which reduces the concentration of channel carrier and modulates electric field...
Activated carbon (AC)-supported composites are emerging as a novel class of materials that hold great promise for environment-protecting applications. In this paper, we present an approach for the preparation of the AC–TiO2 composite with mold-pressing using pure anatase TiO2 and self-sinterable corn straw derivative as the carbon mesophase. In order to explore the effects of the carbon mesophase...
The terahertz (THz) part of the electromagnetic spectrum promises a wide range of new and novel, some may be disruptive, applications. However, the development of technologies in the THz spectrum or the very far infrared region has been slow mainly because of the lack of convenient detectors and lasers. There are a few competing new approaches for better detectors, and here, we concentrate on one...
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