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We report a novel way to generate frequency comb in normal GVD microresonator. By using single FSR intensity-modulated pump, we successfully observe a mode locked frequency comb and bright square pulse for the first time.
We analyze the performance of anti-metal tags when they work in EMC (Electro Magnetic Compatibility) chamber and in substation. It is meaningful to the promotion of RFID(Radio Frequency Identification) tags applied in substation.
This paper presents the application of reflective gratings as polarizers for electron cyclotron heating system in magnetic confinement fusion fields. Two methods, the integral method and the coordinate transformation method, are introduced for the grating design. Codes based on the two methods are developed. Numerical results of the integral method and the coordinate transformation method agree well...
We have demonstrated a thulium-doped mode-locked fiber laser incorporating carbon-nanotube-based saturable absorber (CNT-SA) with ring pattern for the first time. The mode-locking operation can be maintained an intracavity average power of 37.8 mW, indicating that CNT with ring pattern can enhance the thermal damage threshold of SAs near 2 μm.
The unstable region is found shrunk by ∼27.7% in a 1.55-μm near-zero net-cavity-dispersion mode-locked fiber laser by suppressing filter effect. Experimental results show that such spectral filtering effect is significant to laser instability.
Here, the authors demonstrate a method called "Membrane Chips Lithography (MCL)" to form photopolymerized hydrogel-based micro-architectures that utilize polydimethylsiloxane (PDMS) — based microstructures and oxygen inhibition layers. The hydrogel microstructures differ from other microstructures exposed by the transparency mask whereas focusing on designed membrane chips. Base on the thin...
For the first time, the ion-vacancy-based bipolar RRAM has been demonstrated on HKMG stack of FEOL logic 14nm FinFET. A unit cell with two identical FinFETs, one serves as a control transistor and the other one is the storage with resistance switching. It is performed by the edge tunneling and with bipolar switching. More importantly, the sneak path issue in an AND-type array based on this FinFET...
With relentless scaling of transistor dimensions, the single cell soft error rate (SER) reduces with each technology node [1]. InGaAs and Ge complementary FinFET technology is promising for next generation NMOS/PMOS FETs, due to their superior transport properties [2] over silicon, but their soft error performance is unexplored to date. Previous work investigated the SER in InAs nFinFET assuming symmetrical...
We report a laser-ablation aided, direct-write fabrication technique that could convert non-conductive paper rinsed with metal ions and polymer solution into conductive metal carbide and graphene with a typical sheet resistance of 45.3 Ω/□. As fabricated paper electronics inherit the microfiber network from paper and have nanoscale pores and 2D metal carbide flakes due to the laser ablation process...
We demonstrate high-bitrate coherent optical OFDM transmission utilizing low-noise Kerr frequency comb as multi-channel laser source. 4QAM-OFDM data with total bitrate of 136.0 Gb/s are successfully transmitted over a 100 km fiber link.
To provide enough power for modern cities as well as elegant appearance of urban city, the indoor substation has been widely constructed. But the poor ventilation problem of main transformer room also appears. Although the traditional calculation method of air supply volume of ventilator is easy to use, the factor of air surrounding the transformer is not under consideration. So in this paper, a computational...
Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) is a leading candidate for embedded memory applications, with promises of low power, high performance, and non-volatility.
Spin Transfer Torque Magnetic Random Access Memories (STT-MRAM) are based on Magnetic Tunnel Junctions (MTJs) made out of two ferromagnetic electrodes separated by a MgO tunnel barrier.
A novel complementary tunneling FET (C-TFET) has been designed and targeted for the low power and appropriate performance applications (Apps). In this new architecture of C-TFET, the drain and source (D/S) are configured as a staggered structure to increase the tunneling current, and the conventional p-i-n junction C-TFET has been modified as a p-n junction to further enhance the Ion current. The...
Decision making is important for many systems and is fundamental for situation awareness and information fusion. When a decision making process is confronted with new situations, goals and kinds of data, it must evolve and adapt. Highly optimized processes and efficient data structures generally have the disadvantage of having little flexibility or adaptability when confronted with new forms of data...
This paper presents a novel tandem human-machine cognition approach for human-in-the-loop control of complex business-critical and mission-critical systems and processes that are monitored by Internet-of-Things (IoT) sensor networks and where it is of utmost importance to mitigate and avoid cognitive overload situations for the human operators. The approach is based on a decision making supervisory...
A new theory has been developed for geometric variation of trigate FinFETs. This geometric variation includes both line roughness induced variation and oxide-thickness variation, which can be measured from gate capacitance and Ig current variations, respectively. Experimental results show that trigate devices are subject to serious line variations as the fin height scales up and the fin-width scales...
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