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A class E amplifier with inductive clamp circuit topology is improved to have stability for all load conditions at any DC supply voltage, Vdc. Based on the new improved topology, the RF Amplifier is designed, simulated and built to be used as a driver for any class of RF amplifier operating within five percent of frequency bandwidth. It is shown that class E amplifiers with inductive clamp circuits...
RF high-power generators are extensively used for plasma etching technologies. In order to achieve high quality for the Silicon wafer process, power accuracy and stability become critical requirements for RF generators. Since a plasma chamber is regarded as a nonlinear active load, load-pull effect has been investigated thoroughly in recent years. However, power measurement is not just related to...
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