The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We have compared the data retention of irradiated commercial NAND flash memories with that of unirradiated controls. For parts aged by baking at high temperature, there was a statistically significant difference between irradiated samples and unirradiated controls. For parts aged by repetitive Program/Erase (P/E) cycling, the effect of radiation was not statistically significant.
This paper reports modeling the parasitic bipolar device in the 40 nm PD SOI NMOS device considering the floating body effect. Using a unique extraction method, the function of the parasitic bipolar device during transient operations could be modeled. During the turn-on transient by imposing a step voltage from 0 V to 2 V at the gate, the case with a slower rise time shows a faster turn-on in the...
GPUs are becoming an increasingly attractive option for obtaining performance speedups for data-parallel applications. FPGA technology mapping is an algorithm that is heavily data parallel; however, it has many features that make it unattractive to implement on a GPU. The algorithm uses data in irregular ways since it is a graph-based algorithm. In addition, it makes heavy use of constructs like recursion...
For the first time, an efficient methodology to accurately characterize the gate-bulk leakage current (Igb) and gate capacitance (Cgg) of PD SOI floating body (FB) devices was proposed and demonstrated in 40-nm PD SOI devices with ultra-thin oxide EOT 12 A. By applying the RF testing skill for the proposed SOI test patterns, we can eliminate properly the parasitic elements due to the co-existence...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.