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This paper aims to study the effect of process parameter variation on a nano-scaled planar p-type MOSFET (metal-oxide-semiconductor field-effect transistor) device for 22 nm technology using Taguchi's L9 orthogonal array. The device was constructed with high-k/metal gate consisting of Titanium dioxide (TiO2) and Tungsten silicide (WSix) metal gate using an industrial-based numerical simulator. Using...
In this paper, Taguchi method was used to analyze of input process parameters variations on threshold voltage (VTH) in 45nm n-channel Metal Oxide Semiconductor device. The orthogonal array, the signal-to-noise ratio, and analysis of variance are employed to study the performance characteristics of a device. In this paper, there are eight process parameters (control factors) were varied for 2 and 3...
Taguchi method was used to optimize of the effect process parameter variations on threshold voltage in 45nm NMOS device. In this paper, there are four process parameters (factors) were used, which are Halo Implantation, Source/Drain (S/D) Implantation, Oxide Growth Temperature and Silicide Anneal temperature. The virtual fabrication of the devices was performed by using ATHENA module. While the electrical...
In this paper, we investigate the impact of process parameter like halo structure on threshold voltage (VTH) and leakage current (ILeak) in 45nm NMOS device. The settings of process parameters were determined by using Taguchi experimental design method. Besides halo implant, the other process parameters which used were Source/Drain (S/D) implant and oxide growth temperature. This work was done using...
There is a lack of generally applicable methods for reducing energy consumption while ensuring good quality of service in distributed computational grids. We study the energy-aware task allocation problem for assigning a set of tasks onto the machines in a grid environment where the conflicting goals of ensuring quality of service and reducing energy consumption makes the machines compete with each...
The characteristics of high performance 45 nm pMOS devices based on International Technology Roadmap for Semiconductor (ITRS) have been studied using ATHENA and ATLAS's simulator. There are four factors were varied for 3 levels to perform 9 experiments. The factors are halo implantation, Source/Drain (S/D) implantation, oxide growth temperature and silicide anneal temperature. In this paper, Taguchi...
In mobile computing environments, a video encoder should be able to provide high quality of service, which is measured from two perspectives: first, the video quality at a given bit rate must be optimized; second, it should be able to efficiently utilize its power supply to prolong the battery operating time. In other words, it should be able to achieve low power consumption as well as lower video...
Maximum likelihood (ML) is a popular and effective estimator for a wide range of diverse applications and currently affords the most accurate estimation for source localisation in wireless sensor networks (WSN). ML however has two major shortcomings namely, that it is a biased estimator and is also highly sensitive to parameter perturbations. An Optimisation to ML (OML) algorithm was introduced that...
Providing quality of service (QoS) for converging traffic in wireless local area network (WLAN) is still a major issue for the researchers and industries. Due to the limited bandwidth and exposure to unpredictable interferences in a wireless environment, efficient management and optimization of the access protocols are essential to provide acceptable QoS for real-time traffic and fairness to best-effort...
The purpose of this paper is to discuss the effect of Nickel (Ni) thickness on lead free solder joint material for tape ball grid array (TBGA) application. In this study, four different level of Nickel thickness were chose that is 3 um, 4 um, 5 um and 6 um. Ball pull testing was used to assess the solder joint performance at time zero, after multiple reflow and high temperature storage (HTS). The...
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