The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this work, a deep submicron double-gate (DG) Gallium Nitride (GaN)-MESFET design and its 2-D threshold analytical model have been proposed and expected to suppress the short-channel-effects for deep submicron GaN-MESFET-based low power applications. The model predicts that the threshold voltage is greatly improved in comparison with the conventional Single-Gate GaN-MESFET. The developed approaches...
The Double Gate (DG) MOSFET has been proposed as potential alternative to the conventional bulk CMOS structure for extended CMOS scalability beyond 30 nm partly due to its immunity to short channel effects. So, the objective of this work is to provide an accurate drain current model based on an automatic parameter extraction method with PSO (Particle Swarm Optimization) for Current-Voltage-based MOSFET...
The problem of blind analog and digital modulation classification is tackled in this paper. A cyclostationarity-based classifier is proposed, which does not require estimation of carrier phase and frequency offset, signal and noise powers, and timing recovery as preprocessing tasks. Numerical simulations are performed to validate theoretical developments
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.