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Non-Gaussian statistical models fit SAR data better than Gaussian-based statistics, in most cases, but are complicated and time-consuming to use for unsupervised image segmentation via probabilistic clustering. The more advanced the model, the more complicated and slow the clustering. The U-distribution has been demonstrated to be one of the most flexible models, capturing the Gaussian/Wishart, the...
The health management for aircraft system is difficult problem when the system is rife with nonlinear/non-Gaussian time evolution, the model parameters and sensors measurements are subject to uncertainty, and the diagnosis task suffers from some real-time constrains. This paper discusses the most relatively recent researches about Bayesian probability model, which focuses on the Bayesian networks...
Dark current of our InGaAs/InP planar SAGCM APD is simulated. Activation energy Ea obtained from the I-V test under temperature range of 240K∼300K is cooperated in the simulation. Two origins of the dark current increasi of over one order of magnitude from the punchthrouth voltage to the breakthrough voltage are analyzed. Our results provide two critical points to reduce the dark current of an InGaAs/InP...
There are two important resemblances between bio-synapse and semiconducting polymer/electrolyte hetero-junction. The first is that ionic migration at the interface would modulate the ionic movement. The second is in the structure that the ionic channel form in hetero-junction to conduct ion migration. These two aspects suggested the latter could be used in simulating synaptic plasticity. Therefore,...
Pt/Poly[2-methoxy-5-(2-ethylhexyloxy)-1, 4-phenylenevinylene] (MEH-PPV)/polyethylene oxide (PEO) + Alkali ions/Ag devices were fabricated. Microstructure analysis indicated that Cs and K ions were doped initially into the semiconducting polymer after fabrication, which suggests resemblance to the resting state of bio-synapse. The pulse responses of Cs-doped device potentiated monotonically with increased...
An HgCdTe photoconductive infrared detector with metallic nanostructures has been numerically studied. The plasmonic resonant absorption and the photo current response spectra of the detector are investigated by using a combination of the FDTD method and FEM method. The simulated results show the dependence between the geometric design and the performance of the detector. A higher photo response can...
In this paper, we theoretically study the electrical properties of a separate absorption, grading, charge, and multiplication InGaAs/InP avalanche photodiodes(APD) on the multiplication layer for different carrier lifetime, doping and traps concentration. These characteristics can be used to analyze some problems in the process of device fabrication.
The Experimental Advanced Superconducting Tokamak (EAST) is a superconducting tokamak, which successfully achieved the first plasma discharging in 2006. The major radius of EAST plasma is 1.9m, and its central magnet filed is 3.5T. In the past few years, EAST has made many achievements such as 60s double-null divertor configuration plasma and 1MA plasma. In 2012, 411s long-pulse discharging with 0...
The structure parameters and illumination condition for InGaP/GaAs/InGaAs triple-junction solar cells grown on GaAs substrate have been numerically studied to search the optimal point of device performance. The dependences of conversion efficiency, I-V curves, and band diagram on the structure parameters and illumination condition have been investigated. Our work shows that the performances are largely...
We present an infrared perfect absorber which combines gold nanobars and a photonic microcavity. By adjusting the structural geometry, this device is utilized for refractive index sensing. For proper designed structural parameters, it can yield more than 99% absorbance in the near-infrared frequency regime. Our work directly investigate the effect of geometry on sensing performance and it can sever...
The fabrication and modeling for solar-blind AlGaN-based p-i-n photodiode have been presented. The simulated dark current characteristics are in good agreement with the experiments. It is found that the peak responsivity of 0.005A/W can be achieved at 265nm corresponding to the cutoff wavelength of the Al0.45Ga0.55N absorption layer. The transmission spectra drop to nearly zero due to the intense...
Radio Frequency Impedance Interrogation (RFII) measures hemodynamic function via resonance frequency coupling to a hydrophilic protein molecule and the resonant return signal phase change. The RFII device generates a cardiosynchronous waveform from the identification of blood movement in the time, frequency, and voltage domains. While the application of this technology to hemodynamic monitoring has...
The fabrication and electro-optical characteristics for separate absorption and multiplication GaN avalanche photodiode have been presented. The multiplication gain as a function of reverse bias at room temperature is also obtained. It is found that multiplication gain monotonically increases with increasing reverse bias, high multiplication gain of 3×105 at 110V is achieved
Fuzzy logic applied to mineral potential prediction,providing a powerful and flexible theoretical framework for dealing with multi-layer modeling.This research is identified the similarity between the distribution mode of the known ores and the forecasting mode of comprehensive variables.The choice of fuzzy operator γ should be paid special attention to, the small change of the result would have a...
In this paper, ZnO nanomaterials with high effective specific surface area have been prepared and subsequently deposited on the SAW transducer as sensitive layer, finally the responses of the sensor to different ethanol gas concentrations were investigated at room temperature.
The spectral photoresponse characteristics for visible blind GaN/AlGaN p-i-n photodiode have been numerically studied. Effects of the absorption layer thickness and the n-layer thickness on the photoresponse spectra have been investigated. Our work shows that the absorption layer thickness and n-layer thickness have important impact on the peak value of photoresponse spectra and rejection ratio of...
An InGaAs/InP single-photon avalanche photodiode (SPAD) with a high differential gain was achieved by changing the multiplication region thickness and the sheet charge density of the charge layer. A gain of more than 100 was obtained. The DCR is less than 1k with the frequency up to 250 kHz.
In this paper, we report on two-dimensional (2D) numerical simulations of photoresponse for HgCdTe infrared photodiode. Effects of conduction band non-parabolic and band gap narrowing (BGN) have been investigated in detail. By taking into account the contributions: (i) the Burstein-Moss (BM) shift with a non-parabolic conduction band, (ii) the BGN effect, and (iii) the Hg-vacancy-induced acceptor...
The spectral photoresponse and crosstalk characteristic for mid-wavelength InSb infrared focal plane arrays have been numerically studied. Effects of mesa depth, substrate thickness, pixel dimension and channel length on the photoresponse and crosstalk have been investigated. Our work shows that the spectral photoresponse and crosstalk are largely dependent on the geometric design of device.
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