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An influence of the selected physical phenomena: impact ionization in silicon and time variation of internal electric field distribution in partially-depleted (PD) SOI MOSFETs on several C-V characteristics of these devices is presented. The role of avalanche multiplication in the so-called "pinch-off" region is discussed in a more detailed way. The analysis is done using a numerical solver...
A steady-state model of partially-depleted (PD) SOI MOSFETs I-V characteristics in subthreshold range is presented. Phenomena, which must be accounted for in current continuity equation, which is a key equation of the PD SOI MOSFETs model are summarized. A model of diffusion-based conduction in a weakly-inverted channel is described. This model takes into account channel length modulation, drift of...
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