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The work thus presents GEWE-RC MOSFET as a potential candidate for high performance RF applications and achieves fi of 48.6 GHz which is a 31.7 % and 48.5 % improvement as compared to the RC and bulk respectively, at Vgs = 1.0 V, for same set of design parameters, owing to the improved gate controllability and reduced parasitic capacitances. Moreover,intrinsic delay and high gains pertained by GEWE-RC...
This paper focuses on the TCAD assessment of Gate Electrode Workfunction Engineered Recessed Channel (GEWE-RC) MOSFET as a solution to CMOS technology for high performance analog applications in terms of speed-to-power dissipation, device efficiency and hot electron injected gate current design parameters. Moreover, the paper also discusses the effect of gate stack architecture and various design...
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