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In this paper, the impact of gate stack configuration onto the RF/analog and large signal linearity characteristics of insulated shallow extension (ISE) MOSFET is explored. The key factors affecting the device performance and the physics behind it are also scrutinized. The analog performance metrics- gm/ids, rout, vea (early voltage) & gm/gd gain and device linearity metrics-vip2 & vip3 and...
In this paper, for improving the analog performance of scaled MOS devices, structural design involving the integration of Dielectric Pocket (DP) and Dual Material Gate (DMG) onto the conventional MOSFET has been studied by means of Dual Material Gate Insulated Shallow Extension Gate Stack (DMG ISEGaS) MOSFET. Simulation results reveal that Dual Material Gate engineering down to 50 nm regime enhances...
Dual-material-gate (DMG) insulated shallow extension gate-stack MOSFET involving dielectric pocket (DP) and DMG assimilation onto the conventional MOSFET has been studied. Simulations reveal a reduction in substrate leakage current, linearity improvement, enhancement in - gm/IDS, early voltage (VEA), and gm/gd, down to 50-nm gate length as an outcome of this DP and DMG integration.
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