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We address the key factors limiting charge carrier lifetime in 4H-SiC epilayers by demonstrating a viable method for eliminating carbon vacancy (Vc) related Z1/2 lifetime killer sites and by introducing a novel approach in depth-resolved characterization of the carrier lifetimes across the epitaxial layer, which allows monitoring the efficacy of the proposed defect reduction scheme also exposing surface...
Sublimation-grown 3C-SiC crystals were implanted with B ions at elevated temperature (400 °C) using multiple energies (100 to 575 keV) with a total dose of 1.3×1017 atoms/cm2 in order to form intermediate band (IB) in 3C-SiC. The samples were then annealed at 1400 °C for 60 min. An anomalous area in the center was observed in the PL emission pattern. The SIMS analysis indicated that the B concentration...
We report on time-resolved and steady state photoluminescence (PL) studies of strained ZnxCd1−xO/ZnO MQW structures grown on c-plane and r-plane sapphire substrates by Metaloranic Vapor Phase Epitaxy. The high crystalline quality of all MQW structures was confirmed by X-ray diffraction measurements. No emission related to ZnO barriers could be resolved in PL spectra implying effective carrier confinement...
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