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In this paper, a novel consistent gate charge model for GaAs MESFETs based upon charge conservation is proposed. This new model is capable of accurately modeling the transistor under various biasing conditions. Moreover, the performance prediction in the linear region, saturation knee region and sub-threshold region is greatly improved. Measured and modeled results of a 2×150µm GaAs MESFET are compared...
A bottom contact copper phthalocyanine (CuPc) based organic thin film transistor (OTFT) was fabricated in this paper. CuPc thin film acting both as gas sensing layer and the active layer was formed by vacuum evaporation and was characterized by scanning electron microscope(SEM). The results show that the film is highly ordered and has a polycrystalline morphology. The current-voltage characteristics...
On-chip transmission lines are basic components in millimeter-wave and terahertz circuits. In this paper, slow-wave CPW with a simple mosfet switch, ie. controllable slow-wave CPW as a controllable phase delay line are designed, characterized and analyzed in a commercial 0.18 μm CMOS process. Based on measured two-port S-parameters up to 110 GHz, the phase constants are compared at variation of the...
Wireless sensor networks and personal area networks are two relatively new and emerging technologies, capable of addressing a large number of applications such as home automation, medical monitoring, and sports monitoring. This article presents a new sensor network architecture suitable for emerging applications that require a highly mobile group of persons, such as fire fighters or assault teams,...
Broadcasting is an important method of communication in wireless sensor network, the reliability and security of broadcast should be satisfied. Also, due to the limited resources of sensors, reducing the energy consumption is a major consideration. In this paper, we proposed an efficient and reliable broadcast protocol for clustered WSN (ERBP). In ERBP, nodes need its 1-hop neighborhood information...
In this paper we study the effects of Single Walled Carbon Nanotube (SWCNT) diameter variations on performance and stability of 6-T SRAM cells. Parametric and Monte Carlo simulations are performed for SRAM designs based on different SWCNT mean diameters. Parameters such as read/write delays, Static Noise Margin (SNM) and Write Margin (WM) are studied together with the effects of diameter variations...
A bottom contact organic thin-film transistor (OTFT) using a-sexithiophene (α-6T) as an active layer was fabricated in this paper. α-6T was deposited via vacuum evaporation onto a SiO2/n-Si substrate and was characterized by scanning electron microscope (SEM). The current-voltage characteristics of the α-6T OTFT and its response to different concentrations of methanol, alcohol and secondary butyl...
A novel methodology to statistically analyze the statistics on small device performance is presented for the first time. To verify the accuracy of analysis and modeling, TCAD simulation is used to mimic possible process-induced and random fluctuations. The proposed approach precisely decouples various process dependency of the device electric behavior and predicts the device performance trend induced...
Silicon nanowire transistor with side-gate and back-gate has been fabricated by electron beam lithography combined with dry oxidation on a doped silicon-on-insulator wafer. The effects of back-gate and side-gate on the properties of single electron transport were investigated by measuring the channel current as function of the applied gate voltages. The tunable single electron effect and Coulomb oscillations...
Capacitance-voltage (C-V) and frequency dependent conductance-voltage (G-V) measurements have been carried out to investigate the charging and discharging effect induced by interface states and nanocrystalline Si (nc-Si) in floating gate MOS structures. Distinct conductance peaks are observed in the G-V curves for the floating gate with and without nc-Si dots. Based on the calculation of interface...
The electrical transport behavior of carbon nanotube field-effect transistors (CNT-FETs) decorated with gold nanoparticles (NPs) has been investigated. After decoration with Au NPs, the Ion/Ioff ratios of nanotube FETs decrease and some of the p-type devices even change into metallic ones. The Au NPs decrease the contact resistances between the CNTs and metal electrodes, and accordingly increase the...
The nc-Si nonvolatile memory devices with high performance have been fabricated by using general CMOS techniques. High resolution transmission electronic microscope (HRTEM) shows that the average size of nc-Si is 8 nm and its density is 3×1011/cm2. The performance of programming/ erasing and retention time is mainly depending on the quality and thickness of tunnel layer and control layer. The results...
A 700 V SA-LIGBT structure for high voltage applications is presented. An important feature is that the device has a good tradeoff among onset voltage, on-resistance and turn-off speed. This is realized mainly by two methods: large extent of P+ diffusion paralleled with N+ diffusion and the introduction of N-buffer layer in the anode. A robust SA-LIGBT is fabricated successfully with a breakdown voltage...
Fabrication and performance of high-frequency 0.3-μm gate-length depletion-mode metamorphic Al0.50In0.50As/Ga0.47In0.53As high electron mobility transistors (mHEMT) grown by Metalorganic Chemical Vapor Deposition (MOCVD) on n-type silicon substrates is reported. Using a combined optical and e-beam photolithography technology, submicron mHEMT devices on Si have been achieved. A maximum trans-conductance...
To cope with the problems related to benchmark size and diversity for performance evaluation of fault tree analysis methods, this paper defines a reliable benchmark and then proposes a two-step approach to create such a reliable benchmark by randomly generating a set of fault trees. As an illustration, two widely used variable ordering heuristics TD and DF are tested on 1200 random fault trees. Following...
Recent research has shown that tests generated without taking process variation into account may lead to loss of test quality. At present there is no efficient device-level modeling technique that models the effect of process variation on resistive bridges. This paper presents a fast and accurate technique to model the effect of process variation on resistive bridge defects. The proposed model is...
In many traditional hierarchical routing protocols proposed for mobile ad hoc networks, each cluster designates a single cluster-head (CH) node to relay inter-cluster traffic. These cluster-head nodes become traffic “hot-spots” and restricting cluster to access through cluster-head nodes can lead to sub-optimal route. To solve these problems, we proposed a novel cluster-based distributed gateways...
Wireless control technology plays an important role in the field of enterprise's industrial control. A novel system of wireless industrial control network is proposed: Ethernet is adopted in administration network and field bus network in device layer, heterogeneous network structures and protocols in upper-and-lower layers are interconnected with protocol conversion gateway. The network's structure,...
A new structure of under-gate carbon nanotube (CNT) field emission display (FED)panel is proposed in this paper with normally-on driving scheme. In this structure, the gate electrode is still located beneath the cathode with the cathode and focus electrode arranged alternately. The effect of the under-gate is to prevent the field emission when the negative voltage is applied on the gate electrode...
A single channel, loop-unrolled, asynchronous successive approximation (SAR) ADC fabricated in 40nm CMOS is presented. Compared with a conventional SAR structure that exhibits significant delay in the digital feedback logic, the proposed 6b SAR-ADC employs a different comparator for each bit of conversion, with an asynchronous ripple clock generated after each quantization. With the sample rate limited...
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