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Highly epitaxial thin films of lanthanum aluminate (LaAlO 3 ) have been obtained on strontium titanate (SrTiO 3 ) substrates by means of atomic layer deposition using La(thd) 3 (Hthd=2,2,6,6-tetramethylhepta-3,5-dione), Al(CH 3 ) 3 and ozone as precursors. The system shows a near linear relationship between pulsed and deposited composition. Thin films with stoichiometric...
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