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We report high-responsivity Ge quantum dots (QDs) MOS phototransistors as on-chip transducers for highly-integrated, broadband Si-based optical interconnects. Self-organized heterostructure of Ge-QD/SiO2/Si-channel is fabricated in a single step through selective oxidation of SiGe nano-pillars over a Si3N4 buffer layer on Si substrates. Dark current densities (10−7A/mm2), photocurrent-to-dark current...
We report a unique, CMOS approach for the inclusion of size-tunable (7-50-nm), spherical Ge quantum dots (QDs) into gate stacks of Si MOS transistors, through selective oxidation of SiGe pillars over the buffer layer of Si3N4 on top of the Si substrate. The Ge-QD MOS phototransistors feature extremely low dark current densities (Ioff ∼ 0.27 pA/μm2), high Ion/Ioff (>106), steep subthreshold swing...
A diagnosis technique based on delay testing has been developed to map the severity of process variation on each cell/interconnect delay. Given this information, we demonstrate a post-silicon tuning method on row voltage supplies (inside a chip) to restore the performance of failed chips. The method uses the performance map to set voltages by either pumping up the voltage on cells with worse delays...
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