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Transient photovoltage (PV) phenomena in regioregular poly(3-hexylthiophene) (P3HT)/n-crystalline-silicon (n-Si) heterojunction are studied under pulsed laser illumination. The PV transients of P3HT/n-Si heterojunctions are strongly retarded in time up to about 3 μs. The PV transients of P3HT/n-Si heterojunctions with thinner P3HT layer convert from positive to negative at longer times, which is caused...
Surface photovoltage spectroscopy (SPS) was used to investigate the interactions of the interface between regioregular poly(3-hexylthiophene) (P3HT) and n-type single crystalline silicon. The SPS responses of silicon and the P3HT/n-Si heterojunction caused by band to band transition of silicon are 30 mV and 160 mV respectively. The band-bending in the silicon side of the P3HT/n-Si structure is larger...
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