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We have investigated the size dependent properties of the Hall mobility and etch pit dislocations (EPDs) in germanium (Ge) heteroepitaxial layers. Pure Ge thin films were grown by molecular beam epitaxy (MBE) using pattern guided growth at 650°C and compared with homoepitaxially grown films. The results show enhanced Hall mobility and lower dislocation density as the pattern size decreases. The number...
Pattern size dependence of etch pit dislocations (EPDs), strain relaxation and Hall mobility has been investigated in Si 0.62 Ge 0.38 alloy layers grown on a patterned Si template with different sizes of trench openings isolated by oxide. The results show that the EPD density is significantly reduced from 24000 to 6400 cm −2 as the pattern size decreases from 500×500 to 10×10...
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