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As IC technologies continue scaling down, traditional electrostatic discharge (ESD) devices can no longer meet the demands of modern protection, prompting the need for novel device structures. A novel and unique approach to ESD protection using suspended graphene ribbon devices is presented. It has been demonstrated the ribbon's electro-mechanical response to a sudden surge of charge, such as an ESD...
Monotonic scaling-down of CMOS integrated circuit (IC) technologies is rapidly approaching to its physical end, yet advances in ICs will continue. Instead of one-dimensional (1D) scaling dawn, one apparent solution is lateral integration of heterogeneous devices in 3-dimensional (3D) fashion, which opens great opportunities to make more complex Si-based microsystems for unlimited applications well...
Compact and robust electrostatic discharging (ESD) protection structures are critical to on-chip ESD protection for ICs. Conventional in-Si ESD protection structures have many disadvantages. A new above-IC graphene NEMS (gNEMS) switch is reported as an ESD protection structure, which features almost zero leakage and robust ESD protection. A systematic characterization of gNEMS ESD structures was conducted...
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