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We investigate the dark current mechanism for an unpassivated mid wavelength (MW) type II InAs/GaSb superlattice infrared photodetector by doing the variable-area diode tests. The bulk resistance-area product and the resistivity due to the surface current are determined to be 17.72 Ω cm2 and 704.23 Ω cm at 77 K, respectively. It is found that for all the mesa sizes used, the dark current is dominated...
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