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In this paper, we present a study on protective coating techniques for thin film X-TEM sample preparation. The study shows that proper choice of the protective layer before FIB cross section is a crucial step to maintain the film profile and make sure the accuracy of the thickness measurement. Silicon native oxide is used as the target sample. We have investigated PECS metal sputtering followed by...
In this study, a comparison of the interfacial adhesion strength of Plasma Enhanced Chemical Vapor Deposition (PECVD) silicon nitride (SiN)/Cu and High-Density Plasma Chemical Vapor Deposition (HDP CVD) SiN/Cu was performed using the 4-Point-Bending (4PB) technique. Differences in critical energy release rate value Gc, which is an indicator of the interfacial adhesion strength, were observed. The...
Thin film deposition process invariably introduces compressive or tensile stress in the films. The stress in a film causes the wafer to warp whose curvature is estimated in a wafer fab using optical reflectance technique. Alternatively, the wafer curvature can also be measured using the high resolution XRD (HRXRD) Si(004) rocking curves. In this paper, the HRXRD technique was employed to evaluate...
Matrix interferences remain one of the biggest problems for wafer VPD-ICPMS analysis. It is reported here that a few metals such as Ti, Ni, Ga and Ge have been successfully resolved from thick SiO2 matrix interference by a new evaporation method.
Polychromatic sets theory is summarized. Based on the study of process demand for silicon piece manufacturing and process sequence, the polychromatic sets theory was applied to construct the mathematical model of silicon piece process planning. The model was comprised of contour matrix and polychromatic graph, which were respectively used to describe the process demand for silicon piece manufacturing...
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