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A high pulse energy, chirally-coupled-core, Yb-doped fiber amplifier system is reported. This system has a pulse energy output of 1.2 mJ for 25-ns pulses at a repetition rate of 100 kHz, with a slope efficiency of 82%.
We present comprehensive characterization of silicon photonic sensors for methane leak detection. Sensitivity of 40 ppmv after 1 second integration is reported. Fourier domain characterization of on-chip etalon drifts is used for further sensor improvement.
An overview of the state-of-the art of the ongoing research on high-k gate dielectrics for the advanced nano-CMOS technology is presented. The most promising high-k candidates for next-generation MOS devices are highlighted. The associated performance degradation and the scaling limitations of these high-k materials are also discussed and emerging solutions and optimization schemes for the subnanometer...
The stationarity region, i.e., the area in which the statistics of a propagation channel remain constant, is an important measure of the propagation channel, and essential for efficient system design. This paper presents what is to our knowledge the first extensive measurement campaign for measuring the stationarity region of MIMO mm-wave channels. Using a novel 28 GHz phased-array sounder with high...
A low-frequency electrical spectrum analysis method is researched for evaluating broadband characteristics of high-speed dual-parallel Mach-Zehnder modulators (DPMZMs) based on dual-frequency modulation and fixed-frequency bias. The method enables the broadband and high-resolution evaluation for the modulation depth and half-wave voltage of a high-speed DPMZM by using a low-frequency photodetector...
An on-wafer and self-calibrated scheme is proposed and demonstrated for self-referenced microwave characterization of a silicon integrated optical transceiver. The proposed self-calibration method enables on-wafer selective extraction of microwave characteristic parameters of high-speed modulators and photodiodes in the integrated optical transceiver, without the need for extra electrical-to-optical...
In this paper an indirect model predictive current control strategy is proposed. The proposed method simplifies the computational cost while avoiding the use of weighting factors. Weighting factors are an issue for model predictive control in a direct matrix converter due to the large number of available switching states and necessity to control both input and output sides of the converter.
The vertical incidence reflectivity of conformai perfectly matched layer (PML) is an essential property that can demonstrate partly the error and efficiency of absorbing boundary condition (ABC). To design the high-performance conformal PML, some parametric analysis of vertical incidence reflectivity is implemented in this paper. By deducing and solving the recursion relation of reflection coefficient...
Numerical and experimental demonstrations are presented to reduce the distortion induced by intense terahertz field in a cross-polarized terahertz time-domain spectroscopy system. A quarter-wave plate is used to increase the initial birefringence of the probe beam. With an optimized angle, the distortion can be removed effectively, while the signal-to-noise ratio of the system is also improved.
We investigate intense broadband terahertz radiation generation based the interaction of high intensity ultrashort laser with solid plasma. THz pulse with electric field of hundreds of MV/cm are generated using laser with intensity of about 1018 W/cm2. Theoretical model, simulations agree well with experiments, and reveal that the THz radiation is coherent transition radiation by hot electrons produced...
Color-guided depth map up-sampling, such as Markov-Random-Field-based (MRF-based) methods, is a popular depth map enhancement solution, which normally assumes edge consistency between color image and corresponding depth map. It calculates the coefficients of smoothness term in MRF according to such assumption. However, such consistency is not always true which leads to texture-copying artifacts and...
We report, for the first time, a gate last process, used to fabricate Negative Capacitance field effect transistors (NCFETs) with Hf0.5Zr0.5O2 (HZO) as ferroelectric (FE) dielectric in a metal/ferroelectric/insulator/semiconductor (MFIS) configuration. Long channel NCFET's with HZO thickness down to 5 nm exhibit consistent switching behavior with switching slope (SSrev) below kT/q over four decades...
We designed, fabricated, and characterized a metamaterial perfect absorber at terahertz (THz) frequency range utilizing air as the dielectric material. Due to the avoidance of the loss usually introduced by the dielectric material, there was a three times improvement of the quality factor. Also, with metamaterials fabricated on a free-standing silicon nitride membrane, high sensitivity can be achieved...
The subthreshold swing (SS) in MOSFETs is limited to 60 mV/dec change in drain current at room temperature by the Boltzmanr distribution of carriers, thus limiting its operating voltage (VD>SS×log Ion/IOFF). Ferroelectric FETs can achieve sub-60 mV/dec by harnessing the negative capacitance (NC) effect in a Ferroelectric (FE) material, thus enabling low voltage operation [1]. Previous works have...
In this paper, for the first time we demonstrate that horizontally stacked gate-all-around (GAA) Nanosheet structure is a good candidate for the replacement of FinFET at the 5nm technology node and beyond. It offers increased Weff per active footprint and better performance compared to FinFET, and with a less complex patterning strategy, leveraging EUV lithography. Good electrostatics are reported...
We demonstrate high-bitrate coherent optical OFDM transmission utilizing low-noise Kerr frequency comb as multi-channel laser source. 4QAM-OFDM data with total bitrate of 136.0 Gb/s are successfully transmitted over a 100 km fiber link.
The impact of the lifetime enhancement process using high temperature thermal oxidation method on 4H-SiC P-GTOs was investigated. 15 kV 4H-SiC P-GTOs with 140 μm thick drift layers, with and without 1450°C lifetime enhancement oxidation (LEO) process, were compared. The LEO process increased the average carrier lifetime in p-type epi layer from 0.9 μs to 6.25 μs, and it was observed that the effectiveness...
Due to their fast switching speed, knee-free forward characteristics, and a robust, low reverse recovery body diode, SiC MOSFETs are ideal candidates to replace silicon IGBTs in many high-power medium-voltage applications. 1700 V SiC MOSFETs have already been released to production at Wolfspeed based on its 2nd Gen technology. In this paper, we present our latest results in high voltage 4H-SiC MOSFET...
Direct drive permanent magnet (PM) generators have become one of the most attractive solutions for the renewable energy conversion system comparing to the conventional system with gear-box which suffers from maintenance drawbacks.
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