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We demonstrate a record-wide mid-IR comb using Tm-fiber-laser-pumped near-degenerate GaAs OPO. By varying intracavity dispersion, we observe a transition from a single-comb to a two-comb state, where two combs are offset by a constant value.
We present the 1.3-μ m In(Ga)As quantum-dot (QD) vertical-cavity surface-emitting lasers (VCSELs) fabricated by the dielectric-free (DF) approach with the surface-relief (SR) process. Compared with the conventional dielectric-dependent (DD) method, the lower differential resistance and improved output power have been achieved by the DF approach. With the same oxide aperture area, the differential...
We present a theoretical study on mechanism of redshift in InAs/InxGa(1-x)As quantum dots, of which redshift is realized via controlling In composition x and lower confining layer thickness t to ease up the enlargement of band gap due to strain. Introducing In component in the confining layer material leads to significant redshift but thermal quenching due to waning band discontinuity, therefore proper...
GaAs/Ga<;sub>1-x<;/sub>Al<;sub>x<;/sub>As(0<;x<;1.0) multilayer structure is widely used in photodetector, laser and solar cell. Due to the lattice parameter difference between GaAs and Ga<;sub>1-x<;/sub>Al<;sub>x<;/sub>As is very small(less than 0.15% at 300K), Ga<;sub>1-x<;/sub>Al<;sub>x<;/sub>As as a buffer layer in NEA...
With the limitation of epitaxial growth technique, the approximately exponential-doping structure is actually a special kind of gradient-doped structure, in which the doping concentration in the active-layer of the III-V photocathode varies exponentially from bulk to surface. This doping structure can result in a linearly downward band structure which helps form a constant built-in electric fields...
Error modification is introduced to the theoretical calculation and the fitting thicknesses and deviations of the photocathode are obtained in the paper. Measured with the spectrophotometer typed UV-3600, the transmittance spectrum of the sample was achieved ranging from 400 nm to 1100 nm.
A theoretical analysis of wetting layer effect on electronic structures of InAs/GaAs truncated-pyramid quantum dots is carried out using an eight-band Fourier transform-based k·p method. Wetting layer changes ground-state energy significantly whereas modifies probability density function only a little. The main acting region of wetting layer is just underneath the base of the dot.
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