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In this paper we overview recent attempts at co-integrating silicon nano-electro-mechanical systems (NEMS) with nanoelectronic devices aiming to add more functionalities to conventional electronic devices in `More-than-Moore' domain and also explore novel operating principles in `Beyond CMOS' domain.
We realized lithographically-defined electrically-tunable silicon quantum dots (Si QDs) without unintentional localized potentials by improving device structures and fabrication techniques. Carrier density was tuned with a top gate and QD-potentials were controlled with the side gates. We succeeded in observing spin-related tunneling phenomena using the double QD device.
In this paper we present our recent attempts at developing the advanced information processing devices by integrating nano-electro-mechanical (NEM) structures into conventional silicon nanodevices. Firstly, we show high-speed and nonvolatile NEM memory which features a mechanically-bistable floating gate is integrated onto MOSFETs. Secondly we discuss hybrid systems of single-electron transistors...
We study single-electron tunneling characteristics of silicon serial triple quantum dots which consist of lithographically-defined double quantum dots interconnected with a naturally-formed and smaller quantum dot. By controlling the single-electron tunneling through the triple quantum dots electrostatically using multiple side gates, the charge stability diagrams are characterized experimentally...
We investigate novel serially-connected multiple single-electron transistors (MSETs) as a single-charge polarisation readout for silicon integrated charge qubits. We first design and analyse the double single-electron transistors (DSETs) in which double quantum dots are connected in series with two side gates. We show that the DSETs are sufficiently sensitive to distinguish all the single-charge polarisation...
In this paper, the authors present p-type thin-film transistors based on size-controlled Si nanocrystals dispersed on SiO2 matrix. We demonstrate that the influence of Al/Si nanocrystals contacts on thin film transistor characteristics.
Ab initio simulation of 'nanophonons' has been conducted for the first time for the H-terminated ultrathin Si films of 3 to 10 atomic layers in thickness and have revealed that the phonon bandgaps are formed as a result of the Si dimers on the surface.
We fabricated the Si MQDADs. and measured their electron transport properties. The currents through the MQDADs were analyzed and the strong interaction. between the two DQDs was observed. The MQDADs are promising candidates for the novel information devices.
One-dimensional semiconductor nanostructures have attracted much attention because of their potential applications in the design of novel electronic, photonic, and sensing devices. Due to their high mobility of electrons and holes, Ge nanowires are particularly attractive for high-speed field-effect transistors. Moreover, Ge nanowires are potentially useful for building quantum bits because of a long...
This paper reports on integration of two silicon (Si) charge quantum bits (qubits) and series-connected double single-electron transistors (DSETs) as readout for the first time. We design and fabricate the DSETs composed of double quantum dots (DQDs) connected in series with two side gates patterned on a silicon-on-insulator substrate. The individual SETs are sufficiently sensitive to detect single-charge...
Summary form only given. The controlled synthesis of defect-free Si nanowires with small diameters is a prerequisite to realize Si nanowire based electronics and photonics devices. The crystallinity of vapor-liquid-solid (VLS) grown nanowires can be very good and some times termed as defect-free. Here, the authors report the size dependent defects in Si nanowires grown epitaxially in <111> as...
We performed HF treatment to silicon quantum dots with diameter of 8 nm plusmn 1 nm fabricated by VHF plasma decomposition process. We observed PL wavelength shift from 750 nm to 620 nm for 8 nm to 2.5 nm diameter nc-Si dots.
We have developed a new fabrication process of three-dimensional photonic crystal (3DPC) structures using the self-aligned two-directional electrochemical etching method. We performed optical measurements to clarify the properties of the fabricated 3DPC structures and observed a decrease in the reflectance. We also observed for silicon nanocrystals deposited on the 3DPC structures that the photoluminescence...
We have reported periodic pore formation with diameter in 80 nm and aspect ratio above 250 on N+(100) silicon substrate and demonstrated the fabrication of silicon 3-dimensional microstructures by applying double directional etchings method.
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