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We study single-electron tunneling characteristics of silicon serial triple quantum dots which consist of lithographically-defined double quantum dots interconnected with a naturally-formed and smaller quantum dot. By controlling the single-electron tunneling through the triple quantum dots electrostatically using multiple side gates, the charge stability diagrams are characterized experimentally...
The nonvolatile NEMS memory concept is based on the electro-mechanical bistability of the sub-??m-long NEMS structure (Fig. 1). It features a buckled SiO2 bridge which is suspended in the cavity and incorporates the Si nanodots (SiNDs) as single-electron storage. The bridge flips by applying the gate electric field, and its flip-flop motion may be sensed electrically by MOSFET underneath. In this...
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