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We report GaN p-n diodes on free-standing GaN substrates: a record high Baliga's figure-of-merit (VB2/ Ron) of 12.8 GW/cm2 is achieved with a 32 μm drift layer and a diode diameter of 107 μm exhibiting a BV > 3.4 kV and a Ron < 1 mΩ-cm2. The leakage current density is low: 10−3 − 10−4 A/cm2 at 3 kV. A record low ideality factor of 1.1–1.3 is signature of high GaN quality. These are among the...
The interface magnetic phenomenon, which forms the backbone of modern information technology, is of great interest for several decades. When two or more dissimilar materials with different long-range magnetic orderings and/or functionalities are combined together, it may give rise to new interfacial properties, such as the proximity effect [1]. The exchange coupling between two FM layers, as well...
Advances in CMOS technology require continuous reductions in the thermal budget employed for activating ion implanted dopants. However, low thermal budget annealing approaches, such as millisecond annealing, must also remove implant damage to minimize junction leakage. This paper explores the trade-offs between dopant diffusion, electrical activation and damage annealing for ultra-shallow junctions...
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