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We have investigated the selective area growth of InP on nano-patterned Si substrates with SiO2 mask by molecular beam epitaxy. By optimizing the growth conditions, the growth of one separate InP single crystallite for each Si opening has been accomplished. It is found that when single crystallites coalesced into larger grains beyond Si openings, lattice strains were introduced in the grains because...
Rare-earth (Gd) doped InGaN films and superlattices (SLs) were synthesized by electron cyclotron resonance (ECR) plasma-assisted molecular beam epitaxy (MBE) in the pursuit of new functional diluted magnetic semiconductors (DMSs). X-ray diffraction profiles of InGa(Gd)N epilayers indicated no phase separation with the avoidance of InN and GdN formation. Gd incorporation into the epilayers was confirmed...
TlInGaAsN/TlInP/InP hetero-structures were studied for the application to the temperature insensitive wavelength laser diodes. By the introduction of N, the incorporation of Tl was increased, but optical properties were degraded. In order to solve this problem, TlInGaAsN/TlInP multiple layer structures with thin TlInGaAsN layer was proposed and the improvement in optical properties was confirmed.
We prepared TlInGaAsN/TlInP triple quantum well structures using gas source molecular beam epitaxy and characterized their structures by means of transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM). Cross-sectional TEM and STEM observations and electron diffraction experiments revealed that naturally-formed vertical quantum wells, so-called lateral composition...
To use III-V compound semiconductors as channel materials in the future advanced MISFETs with high performance, it is important to achieve the growth of III-V-on-Insulator structures on Si substrates. As a first step to accomplish this, we propose the selective formation of InP only on localized areas of Si (100) substrate by molecular beam epitaxy (MBE). It was found that InP was selectively grown...
In the pursuit of devices with reduced temperature-dependent emission wavelengths, TlInGaAsN double quantum well (DQW) structures with different barriers were grown on GaAs substrates by MBE and investigated. Although TlGaAsN barriers gave rise to higher Tl incorporation, as compared to TlGaAs barriers, the presence of lot of dislocations and very rough interfaces reduced the PL characteristics. The...
TlInGaAs/TllnP/InP separate confinement heterostructures (SCHs) were grown by gas-source molecular-beam epitaxy and metal stripe laser diodes (LDs) were fabricated. Temperature variation of electroluminescence peak wavelength was as small as 0.06 nm/K due to the reduced temperature variation of band gap energy of TlInGaAs. Pulsed laser operation was achieved at 77 K - 297 K. Threshold current density...
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