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High-voltage AlGaN/GaN HFETs can produce high RF output power with nearly ideal power-added efficiency. But widespread adoption of these HFETs has been limited by a lack of acceptable reliability data for practical communications and radar applications. Device problems that have been observed include dc current and RF output power degradation as a function of time when the device is operating. Sudden...
This paper shows the effective modeling of GaN HEMT devices using Agilent EEHEMT, a commercially available model in Agilent ADS, Microwave Office, etc. Using a series of pulsed IV, DC, S-parameter and Load-pull measurements, a nonlinear large-signal model is extracted to fit the circuit behavior of the device in a real application. Detailed steps are shown in extracting extrinsic and intrinsic parameters...
Gallium nitride (GaN) amplifiers have demonstrated very high power density as well as wide bandwidth in previous research. This paper examines their use in supplying flat gain, power, and linearity across a large bandwidth. It demonstrates two types of power amplifiers: a Ft Doubler (FT2) amplifier and a Cascode amplifier, both of which require a simple PCB tune. Both amplifiers show 0.2 to 4GHz bandwidth...
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