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The effects of the emitter resistance reduction on the DC and high-frequency characteristics in an AIGaAs/GaAs HBT with an InGaAs emitter cap layer are investigated. In fabricated devices, a transconductance per unit area of 16mS/?m2 and a cutoff frequency of 80 GHz have been achieved.
A new self-aligned AlGaAs/GaAs HBT with an InGaAs emitter cap layer is presented. This HBT has nonalloyed ohmic contacts to the emitter and base that are formed simultaneously and in a self-aligned manner. The low emitter contact resistance of 1.4?10-7 ?cm2 and the high transconductance per unit area of 3.3 mS/?m2 demonstrate the effectiveness of this structure.
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