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The performance of parallel electric field tunnel field-effect transistors (TFETs), in which band-to-band tunneling (BTBT) was initiated in-line to the gate electric field, was evaluated. The TFET was fabricated by inserting a parallel-plate tunnel capacitor between heavily doped source wells and gate insulators. Analysis using a distributed-element circuit model indicated there should be a limit...
Purpose In Japan, a national surveillance study of antimicrobial consumption has never been undertaken. This study aimed to describe antimicrobial consumption and resistance to Pseudomonas aeruginosa in 203 Japanese hospitals, to identify targets for quality improvement. Methods We conducted an ecological study using retrospective data (2010). Antimicrobial consumption was collected in the World...
CMOS tunnel FETs (TFETs) with vertical-tunnel-multiplication (VTM) were fabricated. VTM TFETs initiate band-to-band tunneling (BTBT) parallel to the gate electric field and effectively extend the tunnel area. Impact of the VTM was analyzed using a distributed-element circuit model, and the drain current multiplication by extended tunnel area was experimentally revealed for the first time.
We have investigated the stress memorization technique (SMT) using poly-gates through both physical analysis and electrical characterization. It has been clarified that channel compressive strain in the vertical direction originates from poly-gate volume expansion, which is associated with both grain growth and highly concentrated impurities implanted into gates. By optimizing key factors in the SMT...
Dye-sensitized solar cell is expected as a novel type photovoltaic device which can be composed by using a plastic substrate. To obtain the plastic solar cell, sol-gel method was utilized because it is suitable to low-temperature fabrication. The equivalent circuit analysis was useful to evaluate internal electrical characteristics and effects of treatments. Mixing of Ti-precursor sol led to a decrease...
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