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In this paper, the equivalent circuit model of a pair of TSVs in a passive interposer base is developed, with the nonlinear MOS capacitance effect treated appropriately. Based on the circuit model, the transient analysis of the interposer TSVs is carried out. The results would be helpful for the design and practical applications of interposer-based 2.5-D IC systems.
The ultimate end of CMOS scaling was predicted almost immediately after the now ubiquitous technology was invented by Frank Wanlass in 1963 [1]. Indeed, many possible limitations to downscaling were discussed in the 1970s, 80s, and 90s [2]. In 2003, Zhirnov et al. [3] estimated the minimal feature size of a “binary logic switch” to be around 1.5nm, based on the Heisenberg uncertainty and Landauer...
We present the Quantum Computer Aided Design (QCAD) simulator that targets modeling quantum devices, particularly Si double quantum dots (DQDs) developed for quantum computing. The simulator core includes Poisson, Schrodinger, and Configuration Interaction solvers which can be run individually or combined self-consistently. The simulator is built upon Sandia-developed Trilinos and Albany components,...
A low-cost, hermetic wafer-level packaging solution with negligible parasitics suitable for MEMS resonators is presented. A glass cap with embedded 50µm diameter vertical single-crystal silicon feedthroughs is anodically bonded in vacuum to an SOI wafer prefabricated with mechanical resonators. This hermetic packaging process provides virtually zero-parasitic-capacitance vertical interconnects. A...
This paper introduces two newly developed models of capacitive silicon bulk acoustic resonators (SiBARs). The first model is analytical and is obtained from an approximate solution of the linear elastodynamics equations for the SiBAR geometry. The second is numerical and is based on finite-element, multi-physics simulation of both acoustic wave propagation in the resonator and electromechanical transduction...
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