The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A detailed characterization of low temperature operation of n and p MOS devices from 14nm FDSOI CMOS technology has been conducted. The transfer characteristics measured between 77K and 300K exhibit very good performance for effective gate lengths down 15nm, emphasizing the very good control of short channel effects and subthreshold behavior. Moreover, the temperature dependence of the low field mobility...
In this work, we demonstrate the powerful methodology of electronic transport characterization in UTBB FD-SOI devices using cryogenic operation under interface coupling measurement condition. At first we study quantitatively the high-k/metal gate stack-induced transport behavior in long channel case, and, then we investigate the transport properties evolution in highly scaled devices. Mobility degradation...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.