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In this paper, we have presented the need for Middle of Line (MOL) Local Interconnects in a fixed layout shape called “Special Constructs” in order to make 20nm a very compelling technology for product migration from 28nm. These constructs are used to demonstrate considerable area, cost, and power/performance benefits by enabling efficient and manufacturable high density standard cell libraries. Also,...
Periodic pyramid and random nanostructure binary structures of single-crystal silicon wafer was fabricated by chemical etching method. Much lower reflectance of silicon wafer with these structures was obtained compared with that of single pyramid arrays. The morphology and reflectivity of these structures, as well as the influence on nanostructures caused by rapid thermal annealing (RTA) time and...
Periodic sub-wavelength nanocones were simulated for antireflection with three different heights: 300, 500 and 700 nm on Si substrate. On the top of nanocones, we add a layer of Ni and SiO2 with the thicknesses of 10 nm, 20 nm and 30 nm. The reflective characteristics of nanostructures with or without nanomasks were studied by rigorous coupled-wave analysis (RCWA).
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