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Interfacial reactions between a W thin film and a single-crystal (001) β-SiC substrate on rapid thermal annealing from 600 °C to 1100 °C for 60 s were investigated by backscattering spectrometry, X-ray diffraction, secondary ion mass spectrometry and cross-sectional transmission electron microscopy. Backscattering spectrometry shows that W reacts with SiC at 950 °C. The product phases identified...
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