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3C-SiC epitaxial crystal growth was carried out by repeated cycles of Si MBE deposition at room temperature followed by a carbonization under C 2 H 4 and annealing at 900 o C. This was done on a 3x3 reconstructed, well oriented, Si terminated 6H-SiC face. The surface was chemically and crystallographically controlled in situ by photoemission and LEED both during the cleaning...
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