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We systematically studied short-channel mobility (μ) in SOI nanowire transistors (NW Tr.). The strain induced in the NW channel dominates short-L μ. μ of short-L <;110>; NW nFETs largely increases due to vertical compressive strain. We achieved further strain enhancement in NW channel by stress memorization technique (SMT). μ increase by SMT is much larger in NW Tr. than in planar Tr. In <;110>;...
We successfully achieved the reduction of the parasitic resistance and the mobility enhancement in Si nanowire transistors (NW Tr.) by raised source/drain extensions with thin spacer (<;10nm) and by stress induced from heavily-doped gate. Id variations are suppressed by the spacer thinning. By adopting <;100> NW channel instead of <;110> NW, Ion = 1 mA/μm for Ioff = 100 nA/μm is achieved...
We successfully reduced the parasitic resistance of nanowire transistors (NW Tr.) by raised S/D extensions with thin spacers (<;10nm). Id variations are suppressed by spacer thinning and parasitic capacitance increase is minimal. By adopting <;100> NW instead of <;110> NW, Ion = 1mA/μm for Ioff = 100nA/μm is achieved without stress techniques. Long-L mobility (μ) was systematically...
This paper reviews the carrier transport mechanisms and stress engineering in advanced nanoscale MOSFETs. First, carrier transport in bulk (100) and (110) MOSFETs is reviewed. Sub-band structure engineering to enhance mobility as well as ballistic current is also examined.
We present the systematic study on dominant factors of the performance of scaled (110) n/pFETs. STI stress effects and velocity saturation phenomena in narrow and short (110) devices are investigated for the first time. Idsat of scaled (110) nFETs approaches (100) nFETs as a result of mu increase due to transverse compressive stress from STI in (110) nFETs and strong velocity saturation in (100) nFETs...
Carrier transport in advanced MOSFETs is reviewed. First, electron and hole mobility in (110) MOSFETs are compared with those in (100) MOSFETs. Stress engineering is discussed in terms of energy split and effective mass due to the stress. The optimization of multi-gate MOSFET structure is then considered. As an example of ballistic MOSFETs, the performance and stress engineering of CNT FETs with doped...
The physical mechanisms of electron mobility (??e) enhancement by uniaxial stress are investigated for nMOSFETs with surface orientations of (100) and (110). From full band calculations, uniaxial-stress-induced split of conduction band edge (??EC) and effective mass change (??m*) are quantitatively evaluated. It is experimentally and theoretically demonstrated that the energy surface of 2-fold valleys...
In this paper, the first systematic study of uniaxial stress effects on mobility (mu)/on-current (Ion) enhancement and gate current (Ig) reduction in FinFETs is described. We demonstrate for the first time that Ig of (110) side-surface pFinFETs is largely reduced by longitudinal compressive stress due to out-of-plane mass increase. (110) n/pFinFETs are superior to (100) FinFETs in terms of higher...
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