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The dry ice blasting has demonstrated effective cleaning of Si by removal of contaminants and native oxide. The C-V and I-V characteristics of a MOS capacitor fabricated on the dry ice-cleaned Si are as good as those of a MOS capacitor fabricated on RCA-cleaned Si. This result suggests that the dry ice blasting can be used to clean Si wafers as a promising dry process in the Si VLSI technology.
The band structures and carrier transport in (110) pFETs are thoroughly studied over a wide temperature range under high magnetic fields. In (110) pFETs, the degenerate hole bands in bulk Si are separated into the higher energy band (H band) and the lower energy band (L band). The energy difference between these bands is experimentally evaluated. The effective masses of each band are directly obtained...
Random telegraph noise (RTN) in scaled FETs is one of the biggest concerns in the present and future LSIs. However, RTN in high-kappa gate dielectric FETs have not been fully studied yet. In this paper, we have studied RTN in high-kappa pFETs in comparison with that in SiO2 pFETs. It is found for the first time that the reduction of the RTN amplitude (DeltaId/Id) by the surface holes is smaller in...
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