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To model key aspects of surface morphology evolution and to overcome one of the main barriers to the implementation of extreme ultraviolet lithography in semiconductor processing, the 3D Monte Carlo simulation of ion-beam deposition on pit-type defects was performed. Typical pit defects have depths in the 5–20nm range and are about 10 times that wide. The aspect ratio of a defect cross section defined...
This paper demonstrates fixed-beam switches using well-aligned composite SWNT membranes, which were prepared by dielectrophoretic process with Layer-by-Layer self-assembly. The measured DC pull-in voltages ranged from 0.9 V to 4.8 V, depending on the length of switches. AC measurements indicate a switching delay as low as 600 psec for 300 nm beams. This new SWNT composite membrane switch is promising...
A tactile sensor utilizing a patterned and suspended SWNT film as a sensing element is reported in this paper. Dense and oriented SWNT films were self-assembled using dielectrophoresis through the monitoring of the dc resistance of the film. The SWNT film was patterned by lithography and oxygen plasma etching to form a suspended SWNT beam. PDMS primer was spin-coated on the SWNT structure, and cured...
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