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In this paper we present an extensive comparison of tunneling device simulations versus experimental results. Different tunneling models were used to simulate long channel silicon on insulator tunneling field effect transistors. The results were compared to experimental results, which were taken from the literature. A calibrated parameter set of the dynamic NonLocal-Tunneling model is presented, which...
Ion implantation profiles of boron after a BF3 plasma immersion ion implantation in a plasma implanter with a pulsed voltage ion extraction were investigated both experimentally and by means of numerical simulation. Boron profiles for different ion implantation doses in the range 1015 to 1017 cm−2 were measured using the SIMS method. Simulations were performed using a Monte-Carlo based binary-collision...
The effects of implant dose and annealing conditions on the diffusion, activation, and out-diffusion of the typical n-type dopants in germanium (phosphorus, arsenic, antimony) were studied. First, short annealing times were used to limit the diffusion of dopants and to match the conditions needed for the realization of shallow junctions. Sb is not well suited to achieve high activation levels because...
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