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The input resistance of CMOS circuits is a measurable limit on the performance of typical static CMOS logic gates. A survey of measured data from five generations of CMOS technology including polysilicon oxynitride gate first stacks (P-SiON) high-K metal gate first stacks (GF) and high-K replacement metal gate stacks (RMG) shows a trend of increasing gate resistance. We show DC and RF measurements...
We have investigated, by TCAD simulations, a tri-gate MOSFET fabricated in a bulk CMOS technology. By biasing both lateral-gates with the same voltage, this device is operated as a surface-gate transistor and a lateral one in parallel connection. We observe two different thresholds and a non-standard behavior of the lateral MOS due to source-drain doping profiles. This proposed device with multi-gate...
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