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Multiple gate field-effect transistors (MuGFET) are generally used in modern time semiconductor field due to better transistor current flow. However in the last advanced generation, MuGFET has transferred to Fin Field Effect Transistor (FinFET) structure with 3 dimensional (3-D) geometry to enable the minimize off-state leakage currents, high transistor current flow and quick switch…etc. advantages...
In this study, a robust Cu chemical mechanical polishing (CMP) process with better Cu polishing profile, lower defectivity and tighten metal line sheet resistance (Rs) control has been evaluated on a dual wafer polisher to meet the CuCMP process criteria at 28nm node. As the metal line width kept shrinking to 28nm node, the CMP correlated performance such as metal line resistance which resulted from...
A robust poly opening polish (POP) CMP for replacement metal gate (RMG) application has been developed to meet the criteria of High-k metal gate (HKMG) devices at 28nm technology node. From the previous performance of POP CMP, the uniformity and loading was an important factor of product with HKMG. The polish rate and selective of platen 2, which were key physical characters, was taken to study by...
As device dimensions shrunk to the 14 nm node and beyond, damascene Cu/low-k high aspect ratio of interconnect schemes face extreme difficulties in achieving defect-free Cu gap-fill. The CVD Co was implemented to improve Copper interconnect performance which was deposited between the PVD Ta(N) liner barrier and the Cu seed layer to improve copper to barrier adhesion and copper gap fill. Therefore,...
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